Infineon is sampling an IGBT package which can hold an IGBT up to 120A and a full rated diode in the same footprint and pin-out as JEDEC standard TO-247-3. Volume production is planned for Q1 2015.

While the market for electric vehicles may have slowed in recent months there is volume growth of both battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs). New generation of ...

Infineon Technologies AG recently launched a 6.5 kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. This new RCDC (Reverse Conducting IGBT with ...

Infineon Technologies has announced the introduction of the EiceDRIVER Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate driver power supplies. The EiceDRIVER power ...

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched a 6.5 kV power module that features IGBT and freewheeling diode functionality integrated into a single chip. This new RCDC (Reverse ...

Infineon has added four current ratings to its EconoDual 3 portfolio of 1.2kV dual IGBT modules. Rated at 300, 450, 600 and 900A (see table below) the transistor pair inside the modules is connected ...

New York, March 14, 2023 (GLOBE NEWSWIRE) -- Reportlinker.com announces the release of the report "Insulated Gate Bipolar Transistor (IGBT) Global Market Report 2023 ...

To support the rapid growth of electric vehicles, Infineon has introduced a new generation of energy-efficient silicon IGBTs and reverse-conducting IGBTs (RC-IGBTs). The 3rd generation Electric Drive ...

Infineon Technologies AG uses the advanced neutral-point-clamped (ANPC) topology for its hybrid silicon-carbide (SiC) and IGBT power module EasyPACK 2B in the 1200-V family. Optimizing for sweet-spot ...