Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.
MOSFETs have been the chosen transistor technology in most Switched Mode Power Supplies (SMPS) since the mid 1980’s. MOSFETs are used as the main switching transistor as well as to improve efficiency ...
Vishay Intertechnology, Inc. introduced the first two devices in its new 600 V EF Series of fast body diode n-channel power MOSFETs. With low reverse recovery charge and on-resistance, the Vishay ...
Embarking as the industry's first 190V n-channel power MOSFET with a co-packaged, 190V power diode, the SiA850DJ measures 2 mm x 2 mm x 0.75 mm and also claims to be the industry's first such device ...
Failure Mechanism Detection Algorithm With MOSFET Body Diode A defect diagnosis and physical damage detection method for electronic packaging are studied by measuring the thermal impedance through the ...
The TPH2R70AR5 is a 100V-rated N-channel power MOSFET Credit: Toshiba Electronics Europe The device has been fabricated with Toshiba’s latest-generation process, known as U-MOS11-H, and the MOSFET is ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
Vishay Intertechnology is offering a monolithic mosfet and Schottky device based on its TrenchFET Gen III silicon which has a low on-resistance of 3mohm at a 10V gate drive and 3.8mohm at 4.5V. The ...
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